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Direct and indirect band gaps
In semiconductor physics, the band gap of a semiconductor is always one of two types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are the same, it is called a "direct gap". If they are different, it is called an "indirect gap". The band gap is called "direct" if the momentum of electrons and holes is the same in both the conduction band and the valence band; an electron can directly emit a photon. In an "indirect" gap, a photon cannot be emitted because the electron must pass through an intermediate state and transfer momentum to the crystal lattice.
==Implications for radiative recombination==
Interactions among electrons, holes, phonons, photons, and other particles are required to satisfy conservation of energy and crystal momentum (i.e., conservation of total k-vector). A photon with an energy near a semiconductor band gap has almost zero momentum. One important process is called radiative recombination, where an electron in the conduction band annihilates a hole in the valence band, releasing the excess energy as a photon. This is possible in a direct band gap semiconductor if the electron has a k-vector near the conduction band minima (the hole will share the same k-vector), but not possible in an indirect band gap semiconductor, as photons cannot carry crystal momentum, and thus conservation of crystal momentum would be violated. For radiative recombination to occur in an indirect band gap material, the process must also involve the absorption or emission of a phonon, where the phonon momentum equals the difference between the electron and hole momentum. (It can also, instead, involve a crystallographic defect, which performs essentially the same role.) The involvement of the phonon makes this process much less likely to occur in a given span of time, which is why ''radiative recombination is far slower in indirect band gap materials than direct band gap ones''. This is why light-emitting and laser diodes are almost always made of direct band gap materials, and not indirect band gap ones like silicon.
The fact that radiative recombination is slow in indirect band gap materials also means that, under most circumstances, radiative recombinations will be a small proportion of total recombinations, with most recombinations being non-radiative, taking place at point defects or at grain boundaries. However, if the excited electrons are prevented from reaching these recombination places, they have no choice but to eventually fall back into the valence band by radiative recombination. This can be done by creating a dislocation loop in the material. At the edge of the loop, the planes above and beneath the "dislocation disk" are pulled apart, creating a negative pressure, which raises the energy of the conduction band substantially, with the result that the electrons cannot pass this edge. Provided that the area directly above the dislocation loop is defect-free (no non-radiative recombination possible), the electrons will fall back into the valence shell by radiative recombination, thus emitting light. This is the principle on which "DELEDs" (Dislocation Engineered LEDs) are based.
抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』
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